| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CSD18502Q5B | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 40V | 26A (Ta), 100A (Tc) | 2.3 mOhm @ 30A, 10V | 2.2V @ 250µA | 68nC @ 10V | 5070pF @ 20V | 3.2W | Surface Mount | 8-TDFN Exposed Pad | |
| SQM110N04-02L-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 40V | 120A (Tc) | 2.3 mOhm @ 30A, 10V | 2.5V @ 250µA | 250nC @ 10V | 9000pF @ 25V | 375W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| SUM110N04-2M3L-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 40V | 110A (Tc) | 2.3 mOhm @ 30A, 10V | 3V @ 250µA | 360nC @ 10V | 13600pF @ 25V | 3.75W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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