40V,Drain to Source Voltage (Vdss)
TO-220-5,Package / Case
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK7908-40AIE,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A 8 mOhm @ 50A, 10V 4V @ 1mA 84nC @ 10V 3140pF @ 25V 221W Through Hole TO-220-5
BUK9907-40ATC,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A 6.5 mOhm @ 50A, 10V 2V @ 1mA - 5836pF @ 25V 272W Through Hole TO-220-5
BUK7905-40AIE,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A 5 mOhm @ 50A, 10V 4V @ 1mA 127nC @ 10V 5000pF @ 25V 272W Through Hole TO-220-5
BUK7905-40AI,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A (Tc) 5 mOhm @ 50A, 10V 4V @ 1mA 127nC @ 10V 5000pF @ 25V 272W Through Hole TO-220-5
BUK7907-40ATC,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A (Tc) 7 mOhm @ 50A, 10V 4V @ 1mA 108nC @ 10V 4500pF @ 25V 272W Through Hole TO-220-5
BUK7905-40ATE,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A (Tc) 5 mOhm @ 50A, 10V 4V @ 1mA 118nC @ 10V 4500pF @ 25V 272W Through Hole TO-220-5
BUK794R1-40BT,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 40V 75A 4.1 mOhm @ 50A, 10V 4V @ 1mA 83nC @ 10V 6808pF @ 25V 272W Through Hole TO-220-5