IPD060N03L G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
50A (Tc)
|
6 mOhm @ 30A, 10V
|
2.2V @ 250µA
|
23nC @ 10V
|
2400pF @ 15V
|
56W
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
IPB065N03L G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
50A (Tc)
|
6.5 mOhm @ 30A, 10V
|
2.2V @ 250µA
|
23nC @ 10V
|
2400pF @ 15V
|
56W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
IPP065N03L G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
50A (Tc)
|
6.5 mOhm @ 30A, 10V
|
2.2V @ 250µA
|
23nC @ 10V
|
2400pF @ 15V
|
56W
|
Through Hole
|
TO-220-3
|
IPS060N03L G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
50A (Tc)
|
6 mOhm @ 30A, 10V
|
2.2V @ 250µA
|
23nC @ 10V
|
2400pF @ 15V
|
56W
|
Through Hole
|
TO-251-3 Short Leads, IPak, TO-251AA
|
IPU060N03L G |
INFINEON TECHNOLOGIES AG |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
50A (Tc)
|
6 mOhm @ 30A, 10V
|
2.2V @ 250µA
|
23nC @ 10V
|
2400pF @ 15V
|
56W
|
Through Hole
|
TO-251-3 Long Leads, IPak, TO-251AB
|
PSMN8R0-30YL,115 |
NXP SEMICONDUCTORS |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
62A (Tmb)
|
8.3 mOhm @ 15A, 10V
|
2.15V @ 1mA
|
18.3nC @ 10V
|
1005pF @ 15V
|
56W
|
Surface Mount
|
SC-100, SOT-669, 4-LFPAK
|
SI7748DP-T1-GE3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
50A (Tc)
|
4.8 mOhm @ 15A, 10V
|
2.7V @ 1mA
|
92nC @ 10V
|
3770pF @ 15V
|
56W
|
Surface Mount
|
PowerPAK® SO-8
|
SI7374DP-T1-E3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
24A (Tc)
|
5.5 mOhm @ 23.8A, 10V
|
2.8V @ 250µA
|
122nC @ 10V
|
5500pF @ 15V
|
56W
|
Surface Mount
|
PowerPAK® SO-8
|
SI7374DP-T1-GE3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
30V
|
24A (Tc)
|
5.5 mOhm @ 23.8A, 10V
|
2.8V @ 250µA
|
122nC @ 10V
|
5500pF @ 15V
|
56W
|
Surface Mount
|
PowerPAK® SO-8
|