250V,Drain to Source Voltage (Vdss)
150W,Power - Max
15 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
AOD458 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 250V 14A (Tc) 280 mOhm @ 7A, 10V 4.5V @ 250µA 15nC @ 10V 770pF @ 25V 150W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
FQA9P25 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 250V 10.5A 620 mOhm @ 5.25A, 10V 5V @ 250µA 38nC @ 10V 1180pF @ 25V 150W Through Hole TO-3P-3, SC-65-3
IXTR30N25 IXYS CORP
MOSFET N-Channel, Metal Oxide 250V 25A (Tc) 75 mOhm @ 15A, 10V 4V @ 250µA 136nC @ 10V 3950pF @ 25V 150W Through Hole -
RJK2508DPK-00#T0 RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 250V 50A 64 mOhm @ 25A, 10V - 60nC @ 10V 2600pF @ 25V 150W Through Hole TO-3P-3, SC-65-3
2SK2967(F) TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 250V 30A (Ta) 68 mOhm @ 15A, 10V 3.5V @ 1mA 132nC @ 10V 5400pF @ 10V 150W Through Hole TO-3P-3, SC-65-3
IRFP244PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 250V 15A (Tc) 280 mOhm @ 9A, 10V 4V @ 250µA 63nC @ 10V 1400pF @ 25V 150W Through Hole TO-247-3
IRFP244 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 250V 15A (Tc) 280 mOhm @ 9A, 10V 4V @ 250µA 63nC @ 10V 1400pF @ 25V 150W Through Hole TO-247-3
IRF644NS VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 250V 14A (Tc) 240 mOhm @ 8.4A, 10V 4V @ 250µA 54nC @ 10V 1060pF @ 25V 150W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF644N VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 250V 14A (Tc) 240 mOhm @ 8.4A, 10V 4V @ 250µA 54nC @ 10V 1060pF @ 25V 150W Through Hole TO-220-3
IRF644NSTRL VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 250V 14A (Tc) 240 mOhm @ 8.4A, 10V 4V @ 250µA 54nC @ 10V 1060pF @ 25V 150W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB