250V,Drain to Source Voltage (Vdss)
1000pF @ 25V,Input Capacitance (Ciss) @ Vds
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STD17NF25 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 250V 17A (Tc) 165 mOhm @ 8.5A, 10V 4V @ 250µA 29.5nC @ 10V 1000pF @ 25V 90W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
STD18NF25 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 250V 17A (Tc) 165 mOhm @ 8.5A, 10V 4V @ 250µA 29.5nC @ 10V 1000pF @ 25V 110W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
STB18NF25 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 250V 17A (Tc) 165 mOhm @ 8.5A, 10V 4V @ 250µA 29.5nC @ 10V 1000pF @ 25V 110W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STP17NF25 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 250V 17A (Tc) 165 mOhm @ 8.5A, 10V 4V @ 250µA 29.5nC @ 10V 1000pF @ 25V 90W Through Hole TO-220-3
STF17NF25 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 250V 17A (Tc) 165 mOhm @ 8.5A, 10V 4V @ 250µA 29.5nC @ 10V 1000pF @ 25V 25W Through Hole TO-220-3 Full Pack
IRF634B_FP001 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 250V 8.1A (Tc) 450 mOhm @ 4.05A, 10V 4V @ 250µA 38nC @ 10V 1000pF @ 25V 74W Through Hole TO-220-3
IRFS634B_FP001 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 250V 8.1A (Tc) 450 mOhm @ 4.05A, 10V 4V @ 250µA 38nC @ 10V 1000pF @ 25V 38W Through Hole TO-220-3 Full Pack
STI17NF25 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 250V 17A (Tc) 165 mOhm @ 8.5A, 10V 4V @ 250µA 29.5nC @ 10V 1000pF @ 25V 90W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA