250V,Drain to Source Voltage (Vdss)
50A (Tc),Current - Continuous Drain (Id) @ 25°C
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDB2710 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 250V 50A (Tc) 42.5 mOhm @ 25A, 10V 5V @ 250µA 101nC @ 10V 7280pF @ 25V 260W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDP2710 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 250V 50A (Tc) 42.5 mOhm @ 25A, 10V 5V @ 250µA 101nC @ 10V 7280pF @ 25V 260W Through Hole TO-220-3
IXTA50N25T IXYS CORP
MOSFET N-Channel, Metal Oxide 250V 50A (Tc) 50 mOhm @ 25A, 10V 5V @ 1mA 78nC @ 10V 4000pF @ 25V 400W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTQ50N25T IXYS CORP
MOSFET N-Channel, Metal Oxide 250V 50A (Tc) 60 mOhm @ 25A, 10V 5V @ 1mA 78nC @ 10V 4000pF @ 25V 400W Through Hole TO-3P-3, SC-65-3
IXTP50N25T IXYS CORP
MOSFET N-Channel, Metal Oxide 250V 50A (Tc) 50 mOhm @ 25A, 10V 5V @ 1mA 78nC @ 10V 4000pF @ 25V 400W Through Hole TO-220-3
IXTH50N25T IXYS CORP
MOSFET N-Channel, Metal Oxide 250V 50A (Tc) 60 mOhm @ 25A, 10V 5V @ 1mA 78nC @ 10V 4000pF @ 25V 400W Through Hole TO-247-3
IXTC110N25T IXYS CORP
MOSFET N-Channel, Metal Oxide 250V 50A (Tc) 27 mOhm @ 55A, 10V 4.5V @ 1mA 157nC @ 10V 9400pF @ 25V 180W Through Hole -