20V,Drain to Source Voltage (Vdss)
860pF @ 10V,Input Capacitance (Ciss) @ Vds
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
CPH6347-TL-H ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 20V 6A (Ta) 39 mOhm @ 3A, 4.5V - 10.5nC @ 4.5V 860pF @ 10V 1.6W Surface Mount SOT-23-6 Thin, TSOT-23-6
IRF7204PBF INTERNATIONAL RECTIFIER CORP
MOSFET P-Channel, Metal Oxide 20V 5.3A (Ta) 60 mOhm @ 5.3A, 10V 2.5V @ 250µA 25nC @ 10V 860pF @ 10V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRF7204TR INTERNATIONAL RECTIFIER CORP
MOSFET P-Channel, Metal Oxide 20V 5.3A (Ta) 60 mOhm @ 5.3A, 10V 2.5V @ 250µA 25nC @ 10V 860pF @ 10V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRF7204 INTERNATIONAL RECTIFIER CORP
MOSFET P-Channel, Metal Oxide 20V 5.3A (Ta) 60 mOhm @ 5.3A, 10V 2.5V @ 250µA 25nC @ 10V 860pF @ 10V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRF7204TRPBF INTERNATIONAL RECTIFIER CORP
MOSFET P-Channel, Metal Oxide 20V 5.3A (Ta) 60 mOhm @ 5.3A, 10V 2.5V @ 250µA 25nC @ 10V 860pF @ 10V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI3460BDV-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 20V 6.7A (Ta), 8A (Tc) 27 mOhm @ 5.1A, 4.5V 1V @ 250µA 24nC @ 8V 860pF @ 10V 3.5W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI3460BDV-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 20V 8A (Tc) 27 mOhm @ 5.1A, 4.5V 1V @ 250µA 24nC @ 8V 860pF @ 10V 3.5W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI7904BDN-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) 20V 6A 30 mOhm @ 7.1A, 4.5V 1V @ 250µA 24nC @ 8V 860pF @ 10V 17.8W Surface Mount PowerPAK® 1212-8 Dual
SI7904BDN-T1-E3 VISHAY SILICONIX
2 N-Channel (Dual) 20V 6A 30 mOhm @ 7.1A, 4.5V 1V @ 250µA 24nC @ 8V 860pF @ 10V 17.8W Surface Mount PowerPAK® 1212-8 Dual