CPH6347-TL-H |
ON SEMICONDUCTOR |
|
MOSFET P-Channel, Metal Oxide
|
20V
|
6A (Ta)
|
39 mOhm @ 3A, 4.5V
|
-
|
10.5nC @ 4.5V
|
860pF @ 10V
|
1.6W
|
Surface Mount
|
SOT-23-6 Thin, TSOT-23-6
|
IRF7204PBF |
INTERNATIONAL RECTIFIER CORP |
|
MOSFET P-Channel, Metal Oxide
|
20V
|
5.3A (Ta)
|
60 mOhm @ 5.3A, 10V
|
2.5V @ 250µA
|
25nC @ 10V
|
860pF @ 10V
|
2.5W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
IRF7204TR |
INTERNATIONAL RECTIFIER CORP |
|
MOSFET P-Channel, Metal Oxide
|
20V
|
5.3A (Ta)
|
60 mOhm @ 5.3A, 10V
|
2.5V @ 250µA
|
25nC @ 10V
|
860pF @ 10V
|
2.5W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
IRF7204 |
INTERNATIONAL RECTIFIER CORP |
|
MOSFET P-Channel, Metal Oxide
|
20V
|
5.3A (Ta)
|
60 mOhm @ 5.3A, 10V
|
2.5V @ 250µA
|
25nC @ 10V
|
860pF @ 10V
|
2.5W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
IRF7204TRPBF |
INTERNATIONAL RECTIFIER CORP |
|
MOSFET P-Channel, Metal Oxide
|
20V
|
5.3A (Ta)
|
60 mOhm @ 5.3A, 10V
|
2.5V @ 250µA
|
25nC @ 10V
|
860pF @ 10V
|
2.5W
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
SI3460BDV-T1-GE3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
20V
|
6.7A (Ta), 8A (Tc)
|
27 mOhm @ 5.1A, 4.5V
|
1V @ 250µA
|
24nC @ 8V
|
860pF @ 10V
|
3.5W
|
Surface Mount
|
6-TSOP (0.065", 1.65mm Width)
|
SI3460BDV-T1-E3 |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
20V
|
8A (Tc)
|
27 mOhm @ 5.1A, 4.5V
|
1V @ 250µA
|
24nC @ 8V
|
860pF @ 10V
|
3.5W
|
Surface Mount
|
6-TSOP (0.065", 1.65mm Width)
|
SI7904BDN-T1-GE3 |
VISHAY SILICONIX |
|
2 N-Channel (Dual)
|
20V
|
6A
|
30 mOhm @ 7.1A, 4.5V
|
1V @ 250µA
|
24nC @ 8V
|
860pF @ 10V
|
17.8W
|
Surface Mount
|
PowerPAK® 1212-8 Dual
|
SI7904BDN-T1-E3 |
VISHAY SILICONIX |
|
2 N-Channel (Dual)
|
20V
|
6A
|
30 mOhm @ 7.1A, 4.5V
|
1V @ 250µA
|
24nC @ 8V
|
860pF @ 10V
|
17.8W
|
Surface Mount
|
PowerPAK® 1212-8 Dual
|