20V,Drain to Source Voltage (Vdss)
60 mOhm @ 3.6A, 4.5V,Rds On (Max) @ Id, Vgs
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDMA6023PZT FAIRCHILD SEMICONDUCTOR CORP
2 P-Channel (Dual) 20V 3.6A 60 mOhm @ 3.6A, 4.5V 1.5V @ 250µA 17nC @ 4.5V 885pF @ 10V 700mW Surface Mount 6-UDFN Exposed Pad
SI2302ADS-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 20V 2.1A (Ta) 60 mOhm @ 3.6A, 4.5V 1.2V @ 50µA 10nC @ 4.5V 300pF @ 10V 700mW Surface Mount TO-236-3, SC-59, SOT-23-3
SI2302ADS-T1 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 20V 2.1A (Ta) 60 mOhm @ 3.6A, 4.5V 1.2V @ 50µA 10nC @ 4.5V 300pF @ 10V 700mW Surface Mount TO-236-3, SC-59, SOT-23-3
SI2302ADS-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 20V 2.1A (Ta) 60 mOhm @ 3.6A, 4.5V 1.2V @ 50µA 10nC @ 4.5V 300pF @ 10V 700mW Surface Mount TO-236-3, SC-59, SOT-23-3