| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDD2670 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 200V | 3.6A | 130 mOhm @ 3.6A, 10V | 4.5V @ 250µA | 43nC @ 10V | 1228pF @ 100V | 1.3W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| SI4462DY-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 200V | 1.15A (Ta) | 480 mOhm @ 1.5A, 10V | 4V @ 250µA | 9nC @ 10V | - | 1.3W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4462DY-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 200V | 1.15A (Ta) | 480 mOhm @ 1.5A, 10V | 4V @ 250µA | 9nC @ 10V | - | 1.3W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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