200V,Drain to Source Voltage (Vdss)
41nC @ 10V,Gate Charge (Qg) @ Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRFR15N20DPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 200V 17A (Tc) 165 mOhm @ 10A, 10V 5.5V @ 250µA 41nC @ 10V 910pF @ 25V 3W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR15N20DTRLP INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 200V 17A (Tc) 165 mOhm @ 10A, 10V 5.5V @ 250µA 41nC @ 10V 910pF @ 25V 3W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR15N20DTRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 200V 17A (Tc) 165 mOhm @ 10A, 10V 5.5V @ 250µA 41nC @ 10V 910pF @ 25V 3W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFU15N20DPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 200V 17A (Tc) 165 mOhm @ 10A, 10V 5.5V @ 250µA 41nC @ 10V 910pF @ 25V 3W Through Hole TO-251-3 Long Leads, IPak, TO-251AB
IRFR15N20DTRRP INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 200V 17A (Tc) 165 mOhm @ 10A, 10V 5.5V @ 250µA 41nC @ 10V 910pF @ 25V 3W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SIE836DF-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 18.3A (Tc) 130 mOhm @ 4.1A, 10V 4.5V @ 250µA 41nC @ 10V 1200pF @ 100V 104W Surface Mount 10-PolarPAK® (SH)
SIE836DF-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 18.3A (Tc) 130 mOhm @ 4.1A, 10V 4.5V @ 250µA 41nC @ 10V 1200pF @ 100V 104W Surface Mount 10-PolarPAK® (SH)