200V,Drain to Source Voltage (Vdss)
14nC @ 10V,Gate Charge (Qg) @ Vgs
24 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRF7464 INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 200V 1.2A (Ta) 730 mOhm @ 720mA, 10V 5.5V @ 250µA 14nC @ 10V 280pF @ 25V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRF7464TR INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 200V 1.2A (Ta) 730 mOhm @ 720mA, 10V 5.5V @ 250µA 14nC @ 10V 280pF @ 25V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRF7464TRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 200V 1.2A (Ta) 730 mOhm @ 720mA, 10V 5.5V @ 250µA 14nC @ 10V 280pF @ 25V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRF7464PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 200V 1.2A (Ta) 730 mOhm @ 720mA, 10V 5.5V @ 250µA 14nC @ 10V 280pF @ 25V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
IRFR220,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 4.8A (Tc) 800 mOhm @ 2.9A, 10V 4V @ 250µA 14nC @ 10V 280pF @ 25V 42W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR220PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 4.8A (Tc) 800 mOhm @ 2.9A, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRF620SPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 5.2A (Tc) 800 mOhm @ 3.1A, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 3W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFU220PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 4.8A (Tc) 800 mOhm @ 2.9A, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 2.5W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
IRFR220TRLPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 4.8A (Tc) 800 mOhm @ 2.9A, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IRF620PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 200V 5.2A (Tc) 800 mOhm @ 3.1A, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 50W Through Hole TO-220-3