| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDC2612 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 200V | 1.1A | 725 mOhm @ 1.1A, 10V | 4.5V @ 250µA | 11nC @ 10V | 234pF @ 100V | 800mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | |
| FDD2612 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 200V | 4.9A (Ta) | 720 mOhm @ 1.5A, 10V | 4.5V @ 250µA | 11nC @ 10V | 234pF @ 100V | 1.6W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| FDC2612_F095 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 200V | 1.1A (Ta) | 725 mOhm @ 1.1A, 10V | 4.5V @ 250µA | 11nC @ 10V | 234pF @ 100V | 800mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | |
| TPC8012-H(TE12L,Q) | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 200V | 1.8A (Ta) | 400 mOhm @ 900mA, 10V | 5V @ 1mA | 11nC @ 10V | 440pF @ 10V | - | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | |
| IRF9610PBF | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 20W | Through Hole | TO-220-3 | |
| IRF9610SPBF | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 3W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IRF9610 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 20W | Through Hole | TO-220-3 | |
| IRF9610S | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 3W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IRF9610L | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 3W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| IRF9610STRL | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 3W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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