| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDN86246 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 150V | 1.6A (Ta) | 261 mOhm @ 1.6A, 10V | 4V @ 250µA | 5nC @ 10V | 225pF @ 75V | 600mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI2325DS-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 150V | 530mA (Ta) | 1.2 Ohm @ 500mA, 10V | 4.5V @ 250µA | 12nC @ 10V | 510pF @ 25V | 750mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI2325DS-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 150V | 530mA (Ta) | 1.2 Ohm @ 500mA, 10V | 4.5V @ 250µA | 12nC @ 10V | 510pF @ 25V | 750mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 |
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