| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CSD13303W1015 | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 12V | 31A (Ta) | 20 mOhm @ 1.5A, 4.5V | 1.2V @ 250µA | 4.7nC @ 4.5V | 715pF @ 6V | 1.65W | Surface Mount | 6-UFBGA, DSBGA | |
| SI2315BDS-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 12V | 3A (Ta) | 50 mOhm @ 3.85A, 4.5V | 900mV @ 250µA | 15nC @ 4.5V | 715pF @ 6V | 750mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI2315BDS-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 12V | 3A (Ta) | 50 mOhm @ 3.85A, 4.5V | 900mV @ 250µA | 15nC @ 4.5V | 715pF @ 6V | 750mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 |
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