| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ATP405-TL-H | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 100V | 40A (Ta) | 33 mOhm @ 20A, 10V | - | 68nC @ 10V | 4000pF @ 20V | 70W | Surface Mount | ATPAK (2 leads+tab) | |
| BSC060N10NS3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 100V | 14.9A (Ta), 90A (Tc) | 6 mOhm @ 50A, 10V | 3.5V @ 90µA | 68nC @ 10V | 4900pF @ 50V | 125W | Surface Mount | 8-PowerTDFN | |
| IPP072N10N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 100V | 80A (Tc) | 7.2 mOhm @ 80A, 10V | 3.5V @ 90µA | 68nC @ 10V | 4910pF @ 50V | 150W | Through Hole | TO-220-3 | |
| IPI072N10N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 100V | 80A (Tc) | 7.2 mOhm @ 80A, 10V | 3.5V @ 90µA | 68nC @ 10V | 4910pF @ 50V | 150W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| BSC123N10LS G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 100V | 10.6A (Ta), 71A (Tc) | 12.3 mOhm @ 50A, 10V | 2.4V @ 72µA | 68nC @ 10V | 4900pF @ 50V | 114W | Surface Mount | 8-PowerTDFN | |
| IPD068N10N3 G | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 100V | 90A (Tc) | 6.8 mOhm @ 90A, 10V | 3.5V @ 90µA | 68nC @ 10V | 4910pF @ 50V | 150W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| BUK7Y12-100EX | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 85A (Ta) | 12 mOhm @ 25A, 10V | 4V @ 1mA | 68nC @ 10V | 5067pF @ 25V | 238W | Surface Mount | SC-100, SOT-669, 4-LFPAK | |
| SUP50N10-21P-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 100V | 50A (Tc) | 21 mOhm @ 10A, 10V | 4V @ 250µA | 68nC @ 10V | 2055pF @ 50V | 3.1W | Through Hole | TO-220-3 |
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