| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EPC2016 | EPCOS AG | GaNFET N-Channel, Gallium Nitride | 100V | 11A | 16 mOhm @ 11A, 5V | 2.5V @ 3mA | 4.1nC @ 5V | 480pF @ 50V | - | Surface Mount | Die | |
| IRFI4212H-117P | INTERNATIONAL RECTIFIER CORP | 2 N-Channel (Dual) | 100V | 11A | 72.5 mOhm @ 6.6A, 10V | 5V @ 250µA | 18nC @ 10V | 490pF @ 50V | 18W | Through Hole | TO-220-5 Full Pack | |
| BUK96180-100A,118 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 11A | 173 mOhm @ 5A, 10V | 2V @ 1mA | - | 619pF @ 25V | 54W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| BUK95180-100A,127 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 100V | 11A | 173 mOhm @ 5A, 10V | 2V @ 1mA | - | 619pF @ 25V | 54W | Through Hole | TO-220-3 |
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