MOSFET N-Channel, Metal Oxide,FET Type
88W,Power - Max
TO-220-3,Package / Case
14 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRF3706 INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 20V 77A (Tc) 8.5 mOhm @ 15A, 10V 2V @ 250µA 35nC @ 4.5V 2410pF @ 10V 88W Through Hole TO-220-3
IRF3706PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 20V 77A (Tc) 8.5 mOhm @ 15A, 10V 2V @ 250µA 35nC @ 4.5V 2410pF @ 10V 88W Through Hole TO-220-3
PHP9NQ20T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 200V 8.7A 400 mOhm @ 4.5A, 10V 4V @ 1mA 24nC @ 10V 959pF @ 25V 88W Through Hole TO-220-3
PHP29N08T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 75V 27A 50 mOhm @ 14A, 11V 5V @ 2mA 19nC @ 10V 810pF @ 25V 88W Through Hole TO-220-3
IRF530PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 100V 14A (Tc) 160 mOhm @ 8.4A, 10V 4V @ 250µA 26nC @ 10V 670pF @ 25V 88W Through Hole TO-220-3
IRL530PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 100V 15A (Tc) 160 mOhm @ 9A, 5V 2V @ 250µA 28nC @ 5V 930pF @ 25V 88W Through Hole TO-220-3
IRF530 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 100V 14A (Tc) 160 mOhm @ 8.4A, 10V 4V @ 250µA 26nC @ 10V 670pF @ 25V 88W Through Hole TO-220-3
IRFZ34PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 30A (Tc) 50 mOhm @ 18A, 10V 4V @ 250µA 46nC @ 10V 1200pF @ 25V 88W Through Hole TO-220-3
IRLZ34PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 60V 30A (Tc) 50 mOhm @ 18A, 5V 2V @ 250µA 35nC @ 5V 1600pF @ 25V 88W Through Hole TO-220-3
IRL530 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 100V 15A (Tc) 160 mOhm @ 9A, 5V 2V @ 250µA 28nC @ 5V 930pF @ 25V 88W Through Hole TO-220-3