FDP2532 |
FAIRCHILD SEMICONDUCTOR CORP |
|
MOSFET N-Channel, Metal Oxide
|
150V
|
8A (Ta), 79A (Tc)
|
16 mOhm @ 33A, 10V
|
4V @ 250µA
|
107nC @ 10V
|
5870pF @ 25V
|
310W
|
Through Hole
|
TO-220-3
|
FDB2532 |
FAIRCHILD SEMICONDUCTOR CORP |
|
MOSFET N-Channel, Metal Oxide
|
150V
|
8A (Ta), 79A (Tc)
|
16 mOhm @ 33A, 10V
|
4V @ 250µA
|
107nC @ 10V
|
5870pF @ 25V
|
310W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
FDB2532_F085 |
FAIRCHILD SEMICONDUCTOR CORP |
|
MOSFET N-Channel, Metal Oxide
|
150V
|
79A (Tc)
|
16 mOhm @ 33A, 10V
|
4V @ 250µA
|
107nC @ 10V
|
5870pF @ 25V
|
310W
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
FDI2532 |
FAIRCHILD SEMICONDUCTOR CORP |
|
MOSFET N-Channel, Metal Oxide
|
150V
|
8A (Ta), 79A (Tc)
|
16 mOhm @ 33A, 10V
|
4V @ 250µA
|
107nC @ 10V
|
5870pF @ 25V
|
310W
|
Through Hole
|
TO-262-3 Long Leads, I²Pak, TO-262AA
|
APT30M70BVRG |
MICROSEMI POWER PRODUCTS GROUP |
|
MOSFET N-Channel, Metal Oxide
|
300V
|
48A (Tc)
|
70 mOhm @ 500mA, 10V
|
4V @ 1mA
|
225nC @ 10V
|
5870pF @ 25V
|
370W
|
Through Hole
|
TO-247-3
|
APT30M70SVRG |
MICROSEMI POWER PRODUCTS GROUP |
|
MOSFET N-Channel, Metal Oxide
|
300V
|
48A (Tc)
|
70 mOhm @ 500mA, 10V
|
4V @ 1mA
|
225nC @ 10V
|
5870pF @ 25V
|
370W
|
Surface Mount
|
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
|
APT30M70BVFRG |
MICROSEMI POWER PRODUCTS GROUP |
|
MOSFET N-Channel, Metal Oxide
|
300V
|
48A (Tc)
|
70 mOhm @ 500mA, 10V
|
4V @ 1mA
|
225nC @ 10V
|
5870pF @ 25V
|
370W
|
Through Hole
|
TO-247-3
|
IRFPS30N60KPBF |
VISHAY SILICONIX |
|
MOSFET N-Channel, Metal Oxide
|
600V
|
30A (Tc)
|
190 mOhm @ 18A, 10V
|
5V @ 250µA
|
220nC @ 10V
|
5870pF @ 25V
|
450W
|
Through Hole
|
TO-274AA
|