| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK7Y28-75B,115 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 75V | 35.5A (Tc) | 28 mOhm @ 15A, 10V | 4V @ 1mA | 21.2nC @ 10V | 1417pF @ 25V | 85W | Surface Mount | SC-100, SOT-669, 4-LFPAK | |
| IRFB9N65APBF | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 650V | 8.5A (Tc) | 930 mOhm @ 5.1A, 10V | 4V @ 250µA | 48nC @ 10V | 1417pF @ 25V | 167W | Through Hole | TO-220-3 | |
| IRFIB5N65APBF | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 650V | 5.1A (Tc) | 930 mOhm @ 3.1A, 10V | 4V @ 250µA | 48nC @ 10V | 1417pF @ 25V | 60W | Through Hole | TO-220-3 Full Pack, Isolated Tab | |
| IRFB9N65A | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 650V | 8.5A (Tc) | 930 mOhm @ 5.1A, 10V | 4V @ 250µA | 48nC @ 10V | 1417pF @ 25V | 167W | Through Hole | TO-220-3 | |
| IRFIB5N65A | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 650V | 5.1A (Tc) | 930 mOhm @ 3.1A, 10V | 4V @ 250µA | 48nC @ 10V | 1417pF @ 25V | 60W | Through Hole | TO-220-3 Full Pack, Isolated Tab |
© 2016 Copyright
