MOSFET N-Channel, Metal Oxide,FET Type
1230pF @ 15V,Input Capacitance (Ciss) @ Vds
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDMC8878 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 9.6A (Ta), 16.5A (Tc) 14 mOhm @ 9.6A, 10V 3V @ 250µA 26nC @ 10V 1230pF @ 15V 2.1W Surface Mount 8-PowerVDFN
FDD6030L FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 12A (Ta), 50A (Tc) 14.5 mOhm @ 12A, 10V 3V @ 250µA 28nC @ 5V 1230pF @ 15V 1.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6690A FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 12A (Ta), 46A (Tc) 12 mOhm @ 12A, 10V 3V @ 250µA 18nC @ 5V 1230pF @ 15V 1.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6680 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 12A (Ta), 46A (Tc) 10 mOhm @ 12A, 10V 3V @ 250µA 18nC @ 5V 1230pF @ 15V 1.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
FDU6680 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 30V 12A (Ta), 46A (Tc) 10 mOhm @ 12A, 10V 3V @ 250µA 18nC @ 5V 1230pF @ 15V 1.5W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
SIR408DP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 25V 50A (Tc) 6.3 mOhm @ 20A, 10V 2.5V @ 250µA 33nC @ 10V 1230pF @ 15V 44.6W Surface Mount PowerPAK® SO-8
SI7114ADN-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 35A 7.5 mOhm @ 18A, 10V 2.5V @ 250µA 32nC @ 10V 1230pF @ 15V 39W Surface Mount PowerPAK® 1212-8
SI5480DU-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 10.7A (Ta), 12A 16 mOhm @ 7.2A, 10V 3V @ 250µA 34nC @ 10V 1230pF @ 15V 31W Surface Mount -
SI5480DU-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 10.7A (Ta), 12A 16 mOhm @ 7.2A, 10V 3V @ 250µA 34nC @ 10V 1230pF @ 15V 31W Surface Mount -