MOSFET N-Channel, Metal Oxide,FET Type
114nC @ 10V,Gate Charge (Qg) @ Vgs
TO-220-3,Package / Case
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
AOT430 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET N-Channel, Metal Oxide 75V 80A (Tc) 11.5 mOhm @ 30A, 10V 4V @ 250µA 114nC @ 10V 4700pF @ 30V 268W Through Hole TO-220-3
SPP20N65C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 20.7A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 114nC @ 10V 2400pF @ 25V 208W Through Hole TO-220-3
SPP20N60C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 20.7A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 114nC @ 10V 2400pF @ 25V 208W Through Hole TO-220-3
IRFB59N10DPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 100V 59A (Tc) 25 mOhm @ 35.4A, 10V 5.5V @ 250µA 114nC @ 10V 2450pF @ 25V 3.8W Through Hole TO-220-3
IXTP152N085T IXYS CORP
MOSFET N-Channel, Metal Oxide 85V 152A (Tc) 7 mOhm @ 25A, 10V 4V @ 250µA 114nC @ 10V 5500pF @ 25V 360W Through Hole TO-220-3
IXTP182N055T IXYS CORP
MOSFET N-Channel, Metal Oxide 55V 182A (Tc) 5 mOhm @ 25A, 10V 4V @ 250µA 114nC @ 10V 4850pF @ 25V 360W Through Hole TO-220-3
BUK753R5-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 3.5 mOhm @ 25A, 10V 4V @ 1mA 114nC @ 10V 8920pF @ 25V 293W Through Hole TO-220-3
BUK652R7-30C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 30V 100A 3.3 mOhm @ 25A, 10V 2.8V @ 1mA 114nC @ 10V 6960pF @ 25V 204W Through Hole TO-220-3