MOSFET N-Channel, Metal Oxide,FET Type
3.1 mOhm @ 80A, 10V,Rds On (Max) @ Id, Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDP8442_F085 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 40V 23A (Ta), 80A (Tc) 3.1 mOhm @ 80A, 10V 4V @ 250µA 235nC @ 10V 12200pF @ 25V 254W Through Hole TO-220-3
FDP8442 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 40V 23A (Ta), 80A (Tc) 3.1 mOhm @ 80A, 10V 4V @ 250µA 235nC @ 10V 12200pF @ 25V 254W Through Hole TO-220-3
IPB80N04S2L-03 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 40V 80A (Tc) 3.1 mOhm @ 80A, 10V 2V @ 250µA 213nC @ 10V 6000pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB80N03S2-03 G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 80A (Tc) 3.1 mOhm @ 80A, 10V 4V @ 250µA 150nC @ 10V 7020pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB80N03S2-03 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 80A (Tc) 3.1 mOhm @ 80A, 10V 4V @ 250µA 150nC @ 10V 7020pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB80N04S2L-03 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 40V 80A (Tc) 3.1 mOhm @ 80A, 10V 2V @ 250µA 213nC @ 10V 7930pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPI80N03S2L-03 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 80A (Tc) 3.1 mOhm @ 80A, 10V 2V @ 250µA 220nC @ 10V 8180pF @ 25V 300W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
SPP80N03S2L-03 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 80A (Tc) 3.1 mOhm @ 80A, 10V 2V @ 250µA 220nC @ 10V 8180pF @ 25V 300W Through Hole TO-220-3