MOSFET N-Channel, Metal Oxide,FET Type
6.7A (Tc),Current - Continuous Drain (Id) @ 25°C
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FQPF9N25 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 250V 6.7A (Tc) 420 mOhm @ 3.35A, 10V 5V @ 250µA 20nC @ 10V 700pF @ 25V 45W Through Hole TO-220-3 Full Pack
FQAF10N80 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 800V 6.7A (Tc) 1.05 Ohm @ 3.35A, 10V 5V @ 250µA 71nC @ 10V 2700pF @ 25V 113W Through Hole SC-94
STF8NK85Z STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 850V 6.7A (Tc) 1.4 Ohm @ 3.35A, 10V 4.5V @ 100µA 60nC @ 10V 1870pF @ 25V 35W Through Hole TO-220-3 Full Pack
STP8NK85Z STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 850V 6.7A (Tc) 1.4 Ohm @ 3.35A, 10V 4.5V @ 100µA 60nC @ 10V 1870pF @ 25V 150W Through Hole TO-220-3
IRFPF50PBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 900V 6.7A (Tc) 1.6 Ohm @ 4A, 10V 4V @ 250µA 200nC @ 10V 2900pF @ 25V 190W Through Hole TO-247-3
IRFPF50 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 900V 6.7A (Tc) 1.6 Ohm @ 4A, 10V 4V @ 250µA 200nC @ 10V 2900pF @ 25V 190W Through Hole TO-247-3
IRFIB8N50K VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 500V 6.7A (Tc) 350 mOhm @ 4A, 10V 5V @ 250µA 89nC @ 10V 2160pF @ 25V 45W Through Hole TO-220-3 Full Pack, Isolated Tab
IRFIB8N50KPBF VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 500V 6.7A (Tc) 350 mOhm @ 4A, 10V 5V @ 250µA 89nC @ 10V 2160pF @ 25V 45W Through Hole TO-220-3 Full Pack, Isolated Tab