| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDS3170N7 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 100V | 6.7A (Ta) | 26 mOhm @ 6.7A, 10V | 4V @ 250µA | 77nC @ 10V | 2714pF @ 50V | 3W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | |
| FDD2512 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 150V | 6.7A (Ta) | 420 mOhm @ 2.2A, 10V | 4V @ 250µA | 11nC @ 10V | 344pF @ 75V | 1.6W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| SI4896DY-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 80V | 6.7A (Ta) | 16.5 mOhm @ 10A, 10V | 2V @ 250µA | 41nC @ 10V | - | 1.56W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| SI4896DY-T1-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 80V | 6.7A (Ta) | 16.5 mOhm @ 10A, 10V | 2V @ 250µA | 41nC @ 10V | - | 1.56W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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