MOSFET N-Channel, Metal Oxide,FET Type
55V,Drain to Source Voltage (Vdss)
-,Input Capacitance (Ciss) @ Vds
11 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
IRLR2905CPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 55V 36A (Ta) - - - - - Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
IXTU64N055T IXYS CORP
MOSFET N-Channel, Metal Oxide 55V 64A (Tc) - 4V @ 25µA - - - Through Hole TO-251-3 Short Leads, IPak, TO-251AA
FDM100-0045SP IXYS CORP
MOSFET N-Channel, Metal Oxide 55V 100A (Tc) 7.2 mOhm @ 80A, 10V 4V @ 1mA 100nC @ 10V - - Through Hole -
FMD80-0045PS IXYS CORP
MOSFET N-Channel, Metal Oxide 55V 150A (Tc) 4.9 mOhm @ 110A, 10V 4V @ 1mA 86nC @ 10V - - Through Hole -
IXTA180N055T IXYS CORP
MOSFET N-Channel, Metal Oxide 55V 180A (Tc) - 4V @ 1mA - - - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTC180N055T IXYS CORP
MOSFET N-Channel, Metal Oxide 55V - - - - - - Through Hole -
IXTP180N055T IXYS CORP
MOSFET N-Channel, Metal Oxide 55V 180A (Tc) - 4V @ 1mA - - - Through Hole TO-220-3
IXUC100N055 IXYS CORP
MOSFET N-Channel, Metal Oxide 55V 100A (Tc) 7.7 mOhm @ 80A, 10V 4V @ 1mA 100nC @ 10V - 150W Through Hole -
IXUC200N055 IXYS CORP
MOSFET N-Channel, Metal Oxide 55V 200A (Tc) 5.1 mOhm @ 100A, 10V 4V @ 2mA 200nC @ 10V - 300W Through Hole -
BUK9GTHP-55PJTR,51 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V - - - - - - Surface Mount 28-SOIC (0.295", 7.50mm Width)