| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TK22E10N1,S1X | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 100V | 52A (Tc) | 13.8 mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | 1800pF @ 50V | 72W | Through Hole | TO-220-3 | |
| IRF7807ZTR | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 30V | 11A (Ta) | 13.8 mOhm @ 11A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 770pF @ 15V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| IRF7807Z | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 30V | 11A (Ta) | 13.8 mOhm @ 11A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 770pF @ 15V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| IRF7807ZTRPBF | INTERNATIONAL RECTIFIER CORP | MOSFET N-Channel, Metal Oxide | 30V | 11A (Ta) | 13.8 mOhm @ 11A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 770pF @ 15V | 2.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| TK22A10N1,S4X | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 100V | 22A (Tc) | 13.8 mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | 1800pF @ 50V | 30W | Through Hole | TO-220-3 Full Pack | |
| SI4004DY-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 20V | 12A (Tc) | 13.8 mOhm @ 11A, 10V | 2.5V @ 250µA | 33nC @ 10V | 1280pF @ 10V | 5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) |
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