BYW80-200G |
ON SEMICONDUCTOR |
|
Standard
|
200V
|
8A
|
1.25V @ 22A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 200V
|
-
|
3°C/W Jc
|
-65°C ~ 175°C
|
Through Hole
|
TO-220-2
|
MUR1520G |
ON SEMICONDUCTOR |
|
Standard
|
200V
|
15A
|
1.05V @ 15A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 200V
|
-
|
1.5°C/W Jc
|
-65°C ~ 175°C
|
Through Hole
|
TO-220-2
|
STTH1502D |
STMICROELECTRONICS |
|
Standard
|
200V
|
15A
|
1.1V @ 15A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
36ns
|
10µA @ 200V
|
-
|
4.6°C/W Jc
|
175°C (Max)
|
Through Hole
|
TO-220-2
|
STTH2002D |
STMICROELECTRONICS |
|
Standard
|
200V
|
20A
|
1.1V @ 20A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
40ns
|
10µA @ 200V
|
-
|
2.4°C/W Jc
|
175°C (Max)
|
Through Hole
|
TO-220-2
|
STTH1202D |
STMICROELECTRONICS |
|
Standard
|
200V
|
12A
|
1.1V @ 12A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 200V
|
-
|
2.5°C/W Jc
|
175°C (Max)
|
Through Hole
|
TO-220-2
|
FR803 |
DIODES INC |
|
Standard
|
200V
|
8A
|
1.3V @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
150ns
|
10µA @ 200V
|
-
|
-
|
-65°C ~ 175°C
|
Through Hole
|
TO-220-2
|
FES16DTR |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
200V
|
16A
|
950mV @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 200V
|
170pF @ 4V, 1MHz
|
1.2°C/W Jl
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
FES16DT |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
200V
|
16A
|
950mV @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 200V
|
170pF @ 4V, 1MHz
|
1.2°C/W Jl
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
BYW29E-200,127 |
NXP SEMICONDUCTORS |
|
Standard
|
200V
|
8A
|
1.05V @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
10µA @ 200V
|
-
|
2.7°C/W Jl
|
150°C (Max)
|
Through Hole
|
TO-220-2
|
MUR1520 |
ON SEMICONDUCTOR |
|
Standard
|
200V
|
15A
|
1.05V @ 15A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 200V
|
-
|
1.5°C/W Jc
|
-65°C ~ 175°C
|
Through Hole
|
TO-220-2
|