1N5819-G |
COMCHIP TECHNOLOGY CORP |
|
Schottky
|
40V
|
1A
|
600mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1mA @ 40V
|
110pF @ 4V, 1MHz
|
80°C/W Ja
|
-55°C ~ 150°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
1N5819-T |
DIODES INC |
|
Schottky
|
40V
|
1A
|
600mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1mA @ 40V
|
110pF @ 4V, 1MHz
|
50°C/W Ja
|
-65°C ~ 125°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
1N5819 |
FAIRCHILD SEMICONDUCTOR CORP |
|
Schottky
|
40V
|
1A
|
600mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 40V
|
110pF @ 4V, 1MHz
|
45°C/W Jc
|
-65°C ~ 125°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
1N5819-TP |
MICRO COMMERCIAL COMPONENTS |
|
Schottky
|
40V
|
1A
|
600mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1mA @ 40V
|
-
|
80°C/W Ja
|
-55°C ~ 125°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
1N5819-B |
DIODES INC |
|
Schottky
|
40V
|
1A
|
600mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1mA @ 40V
|
110pF @ 4V, 1MHz
|
-
|
-
|
Through Hole
|
DO-204AL, DO-41, Axial
|
SR104-T |
DIODES INC |
|
Schottky
|
40V
|
1A
|
600mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1mA @ 40V
|
110pF @ 4V, 1MHz
|
15°C/W Jl
|
-65°C ~ 150°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
DSB1A20 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
20V
|
1A
|
600mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 20V
|
-
|
220°C/W Ja
|
-
|
Through Hole
|
DO-204AL, DO-41, Axial
|
DSB1A30 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
30V
|
1A
|
600mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 30V
|
-
|
220°C/W Ja
|
-
|
Through Hole
|
DO-204AL, DO-41, Axial
|
DSB1A40 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
40V
|
1A
|
600mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 40V
|
-
|
220°C/W Ja
|
-
|
Through Hole
|
DO-204AL, DO-41, Axial
|
DSB5818 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
30V
|
1A
|
600mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100nA @ 30V
|
-
|
220°C/W Ja
|
-
|
Through Hole
|
DO-204AL, DO-41, Axial
|