| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SCS206AGC | ROHM CO LTD | Silicon Carbide Schottky | 650V | 6A (DC) | 1.55V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 600V | 219pF @ 1V, 1MHz | 2.9°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 | |
| IDH06SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 2.3V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | 2.1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDH06G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 210µA @ 650V | 190pF @ 1V, 1MHz | 2.4°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDH06S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | 2.4°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDV06S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | 4.5°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 Full Pack | |
| SDP06S60 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 300pF @ 0V, 1MHz | 2.6°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-3 | |
| SDT06S60 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 300pF @ 0V, 1MHz | 2.6°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| BY329-1500S,127 | NXP SEMICONDUCTORS | Standard | 1500V (1.5kV) | 6A (DC) | 1.6V @ 6.5A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 250µA @ 1300V | - | 2°C/W Jl | 150°C (Max) | Through Hole | TO-220-2 | |
| BY329X-1500S,127 | NXP SEMICONDUCTORS | Standard | 1500V (1.5kV) | 6A (DC) | 1.6V @ 6.5A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 250µA @ 1300V | - | 4.8°C/W Jh | 150°C (Max) | Through Hole | TO-220-2 Full Pack, Isolated Tab | |
| BY329X-1500,127 | NXP SEMICONDUCTORS | Standard | 1500V (1.5kV) | 6A (DC) | 1.45V @ 6.5A | Fast Recovery =< 500ns, > 200mA (Io) | 230ns | - | - | 4.8°C/W Jh | 150°C (Max) | Through Hole | TO-220-2 Full Pack, Isolated Tab |
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