Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IDH12SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 12A (DC) | 2.1V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | 1.2°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
IDH12S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 600V | 530pF @ 1V, 1MHz | 1.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
SCS212AGC | ROHM CO LTD | Silicon Carbide Schottky | 650V | 12A (DC) | 1.55V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 600V | 438pF @ 1V, 1MHz | 1.6°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 | |
TRS12E65C,S1Q | TOSHIBA CORP | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 90µA @ 170V | 65pF @ 650V, 1MHz | 1.9°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 | |
SDT12S60 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 450pF @ 1V, 1MHz | 1.7°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
BY459-1500,127 | NXP SEMICONDUCTORS | Standard | 1500V (1.5kV) | 12A (DC) | 1.3V @ 6.5A | Fast Recovery =< 500ns, > 200mA (Io) | 350ns | - | - | 1.5°C/W Jl | 150°C (Max) | Through Hole | TO-220-2 |