| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RHRP15120 | FAIRCHILD SEMICONDUCTOR CORP | Standard | 1200V (1.2kV) | 15A | 3.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 100µA @ 1200V | - | 1.5°C/W Jc | -65°C ~ 175°C | Through Hole | TO-220-2 | |
| IDP40E65D2XKSA1 | INFINEON TECHNOLOGIES AG | Standard | 650V | 40A | 2.3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 40µA @ 650V | - | 0.75°C/W Jc | -40°C ~ 175°C | Through Hole | TO-220-2 | |
| DHG20I1200PA | IXYS CORP | Standard | 1200V (1.2kV) | 20A | 2.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 30µA @ 1200V | - | 0.9°C/W Jc | -55°C ~ 150°C | Through Hole | TO-220-2 | |
| BYR29-800,127 | NXP SEMICONDUCTORS | Standard | 800V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | - | 2.5°C/W Jl | 150°C (Max) | Through Hole | TO-220-2 | |
| BYR29-600,127 | NXP SEMICONDUCTORS | Standard | 600V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | 2.5°C/W Jl | 150°C (Max) | Through Hole | TO-220-2 | |
| BYT08P-400 | STMICROELECTRONICS | Standard | 400V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 15µA @ 400V | - | 2.5°C/W Jc | 150°C (Max) | Through Hole | TO-220-2 |
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