DSS20-0015B |
IXYS CORP |
|
Schottky
|
15V
|
20A
|
450mV @ 20A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
10mA @ 15V
|
-
|
0.5°C/W Cs
|
-55°C ~ 150°C
|
Through Hole
|
TO-220-2
|
DSB20I15PA |
IXYS CORP |
|
Schottky
|
15V
|
20A
|
480mV @ 20A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
10µA @ 15V
|
-
|
0.5°C/W Cs
|
-55°C ~ 150°C
|
Through Hole
|
TO-220-2
|
DHG20I600PA |
IXYS CORP |
|
Standard
|
600V
|
20A
|
2.32V @ 20A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
30µA @ 600V
|
-
|
0.9°C/W Jc
|
-55°C ~ 150°C
|
Through Hole
|
TO-220-2
|
MUR2020RG |
ON SEMICONDUCTOR |
|
Standard
|
200V
|
20A
|
1.1V @ 20A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
95ns
|
50µA @ 200V
|
-
|
2°C/W Jc
|
-65°C ~ 175°C
|
Through Hole
|
TO-220-2
|
RD2006FR-H |
ON SEMICONDUCTOR |
|
Standard
|
600V
|
20A
|
1.75V @ 20A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
100µA @ 600V
|
-
|
3.5°C/W Jc
|
150°C (Max)
|
Through Hole
|
TO-220-2
|
LXA20T600 |
POWER INTEGRATIONS INC |
|
Schottky
|
600V
|
20A
|
3.1V @ 20A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
26.5ns
|
250µA @ 600V
|
-
|
1°C/W Jc
|
150°C (Max)
|
Through Hole
|
TO-220-2
|
C4D15120A |
CREE INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
20A
|
1.8V @ 15A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 1200V
|
1200pF @ 0V, 1MHz
|
0.78°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
DHG20I1200PA |
IXYS CORP |
|
Standard
|
1200V (1.2kV)
|
20A
|
2.7V @ 20A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
75ns
|
30µA @ 1200V
|
-
|
0.9°C/W Jc
|
-55°C ~ 150°C
|
Through Hole
|
TO-220-2
|
BYC20-600,127 |
NXP SEMICONDUCTORS |
|
Standard
|
500V
|
20A
|
2.9V @ 20A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
55ns
|
200µA @ 600V
|
-
|
1.2°C/W Jl
|
150°C (Max)
|
Through Hole
|
TO-220-2
|
MUR2020R |
ON SEMICONDUCTOR |
|
Standard
|
200V
|
20A
|
1.1V @ 20A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
95ns
|
50µA @ 200V
|
-
|
2°C/W Jc
|
-65°C ~ 175°C
|
Through Hole
|
TO-220-2
|