| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DPG10I200PA | IXYS CORP | Standard | 200V | 10A | 1.27V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1µA @ 200V | - | 0.5°C/W Cs | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| DPG15I200PA | IXYS CORP | Standard | 200V | 15A | 1.26V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1µA @ 200V | - | 0.5°C/W Cs | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| BYW29-200G | ON SEMICONDUCTOR | Standard | 200V | 8A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | 3°C/W Jc | -65°C ~ 175°C | Through Hole | TO-220-2 | |
| FR803 | DIODES INC | Standard | 200V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 200V | - | - | -65°C ~ 175°C | Through Hole | TO-220-2 | |
| FES16DTR | FAIRCHILD SEMICONDUCTOR CORP | Standard | 200V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 170pF @ 4V, 1MHz | 1.2°C/W Jl | -65°C ~ 150°C | Through Hole | TO-220-2 | |
| FES16DT | FAIRCHILD SEMICONDUCTOR CORP | Standard | 200V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 170pF @ 4V, 1MHz | 1.2°C/W Jl | -65°C ~ 150°C | Through Hole | TO-220-2 | |
| DSEP8-02A | IXYS CORP | Standard | 200V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 200V | - | 0.5°C/W Cs | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| APT15S20KG | MICROSEMI POWER PRODUCTS GROUP | Schottky | 200V | 25A | 830mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 250µA @ 200V | - | 1.1°C/W Jc | -55°C ~ 150°C | Through Hole | TO-220-2 | |
| BYW29E-200,127 | NXP SEMICONDUCTORS | Standard | 200V | 8A | 1.05V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 200V | - | 2.7°C/W Jl | 150°C (Max) | Through Hole | TO-220-2 | |
| BYV79E-200,127 | NXP SEMICONDUCTORS | Standard | 200V | 14A | 1.05V @ 14A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 50µA @ 200V | - | 2°C/W Jl | 150°C (Max) | Through Hole | TO-220-2 |
© 2016 Copyright
