1N5822-T |
DIODES INC |
|
Schottky
|
40V
|
3A
|
525mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
2mA @ 40V
|
-
|
40°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
1N5822 |
STMICROELECTRONICS |
|
Schottky
|
40V
|
3A
|
525mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
2mA @ 40V
|
-
|
80°C/W Ja
|
150°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
1N5822RL |
STMICROELECTRONICS |
|
Schottky
|
40V
|
3A
|
525mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
2mA @ 40V
|
-
|
80°C/W Ja
|
150°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
1N5822-B |
DIODES INC |
|
Schottky
|
40V
|
3A
|
525mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
2mA @ 40V
|
-
|
40°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
1N5822-E3/73 |
VISHAY SEMICONDUCTORS |
|
Schottky
|
40V
|
3A
|
525mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
2mA @ 40V
|
-
|
40°C/W Ja
|
-65°C ~ 125°C
|
Through Hole
|
DO-201AD, Axial
|
1N5822/54 |
VISHAY SEMICONDUCTORS |
|
Schottky
|
40V
|
3A
|
525mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
2mA @ 40V
|
-
|
40°C/W Ja
|
-65°C ~ 125°C
|
Through Hole
|
DO-201AD, Axial
|
1N5822-E3/51 |
VISHAY SEMICONDUCTORS |
|
Schottky
|
40V
|
3A
|
525mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
2mA @ 40V
|
-
|
40°C/W Ja
|
-65°C ~ 125°C
|
Through Hole
|
DO-201AD, Axial
|
1N5822-E3/54 |
VISHAY SEMICONDUCTORS |
|
Schottky
|
40V
|
3A
|
525mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
2mA @ 40V
|
-
|
40°C/W Ja
|
-65°C ~ 125°C
|
Through Hole
|
DO-201AD, Axial
|