| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N5822 | STMICROELECTRONICS | Schottky | 40V | 3A | 525mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 40V | - | 80°C/W Ja | 150°C (Max) | Through Hole | DO-201AD, Axial | |
| STPS5L40RL | STMICROELECTRONICS | Schottky | 40V | 5A | 500mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | 75°C/W Ja | 150°C (Max) | Through Hole | DO-201AD, Axial | |
| NUR460,133 | NXP SEMICONDUCTORS | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 50µA @ 600V | - | 55°C/W Ja | 150°C (Max) | Through Hole | DO-201AD, Axial | |
| NUR460/L02,112 | NXP SEMICONDUCTORS | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 50µA @ 600V | - | 55°C/W Ja | 150°C (Max) | Through Hole | DO-201AD, Axial | |
| NUR460/L03,112 | NXP SEMICONDUCTORS | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 50µA @ 600V | - | 55°C/W Ja | 150°C (Max) | Through Hole | DO-201AD, Axial | |
| NUR460/L01,112 | NXP SEMICONDUCTORS | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 50µA @ 600V | - | 55°C/W Ja | 150°C (Max) | Through Hole | DO-201AD, Axial | |
| NUR460/L04,112 | NXP SEMICONDUCTORS | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 50µA @ 600V | - | 55°C/W Ja | 150°C (Max) | Through Hole | DO-201AD, Axial | |
| DLE30C | ON SEMICONDUCTOR | Standard | 200V | 3A | 980mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | 80°C/W Ja | 150°C (Max) | Through Hole | DO-201AD, Axial | |
| DLE30C-KC9 | ON SEMICONDUCTOR | Standard | 200V | 3A | 980mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | 80°C/W Ja | 150°C (Max) | Through Hole | DO-201AD, Axial | |
| DLE30E | ON SEMICONDUCTOR | Standard | 400V | 3A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 20µA @ 400V | - | 80°C/W Ja | 150°C (Max) | Through Hole | DO-201AD, Axial |
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