| Part Numbers | Manufacturer Name | Datasheet | Format - Memory | Memory Type | Memory Size | Speed | Interface | Voltage - Supply | Operating Temperature | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|
| MR25H256MDCR | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 256K (32K x 8) | 40MHz | SPI Serial | 2.7 V ~ 3.6 V | -40?C ~ 125?C | 8-TDFN Exposed Pad | |
| MR25H256MDFR | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 256K (32K x 8) | 40MHz | SPI Serial | 2.7 V ~ 3.6 V | -40?C ~ 125?C | 8-VDFN Exposed Pad | |
| MR25H10MDCR | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 1M (128K x 8) | 40MHz | SPI Serial | 2.7 V ~ 3.6 V | -40?C ~ 125?C | 8-TDFN Exposed Pad | |
| MR25H10MDFR | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 1M (128K x 8) | 40MHz | SPI Serial | 2.7 V ~ 3.6 V | -40?C ~ 125?C | 8-VDFN Exposed Pad | |
| MR0A16AMYS35R | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 1M (64K x 16) | 35ns | Parallel | 3 V ~ 3.6 V | -40?C ~ 125?C | 44-TSOP (0.400", 10.16mm Width) | |
| MR0A16AMYS35 | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 1M (64K x 16) | 35ns | Parallel | 3 V ~ 3.6 V | -40?C ~ 125?C | 44-TSOP (0.400", 10.16mm Width) | |
| MR25H40MDFR | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 4M (512K x 8) | 40MHz | SPI Serial | 2.7 V ~ 3.6 V | -40?C ~ 125?C | 8-VDFN Exposed Pad | |
| MR25H40MDF | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 4M (512K x 8) | 40MHz | SPI Serial | 2.7 V ~ 3.6 V | -40?C ~ 125?C | 8-VDFN Exposed Pad | |
| MR2A08AMYS35R | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 4M (512K x 8) | 35ns | Parallel | 3 V ~ 3.6 V | -40?C ~ 125?C | 44-TSOP (0.400", 10.16mm Width) | |
| MR2A16AMYS35R | EVERSPIN TECHNOLOGIES INC | RAM | MRAM (Magnetoresistive RAM) | 4M (256K x 16) | 35ns | Parallel | 3 V ~ 3.6 V | -40?C ~ 125?C | 44-TSOP (0.400", 10.16mm Width) |
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