MR0A16AVMA35R |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
1M (64K x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 105?C
|
48-LFBGA
|
MR0A16AVYS35R |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
1M (64K x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 105?C
|
44-TSOP (0.400", 10.16mm Width)
|
MR0A16AVMA35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
1M (64K x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 105?C
|
48-LFBGA
|
MR0A16AVYS35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
1M (64K x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 105?C
|
44-TSOP (0.400", 10.16mm Width)
|
MR2A16AVMA35R |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (256K x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 105?C
|
48-LFBGA
|
MR2A16AVYS35R |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (256K x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 105?C
|
44-TSOP (0.400", 10.16mm Width)
|
MR2A16AVYS35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (256K x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 105?C
|
44-TSOP (0.400", 10.16mm Width)
|
MR2A16AVMA35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (256K x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 105?C
|
48-LFBGA
|