MR25H40CDF |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (512K x 8)
|
40MHz
|
SPI Serial
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
8-VDFN Exposed Pad
|
MR2A08ACYS35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (512K x 8)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
44-TSOP (0.400", 10.16mm Width)
|
MR25H40CDC |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (512K x 8)
|
40MHz
|
SPI Serial
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
8-VDFN Exposed Pad
|
MR25H40CDCR |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (512K x 8)
|
40MHz
|
SPI Serial
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
8-VDFN Exposed Pad
|
MR25H40CDFR |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (512K x 8)
|
40MHz
|
SPI Serial
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
8-VDFN Exposed Pad
|
MR20H40DFR |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (512K x 8)
|
50MHz
|
SPI Serial
|
3 V ~ 3.6 V
|
0?C ~ 70?C
|
8-VDFN Exposed Pad
|
MR20H40DF |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (512K x 8)
|
50MHz
|
SPI Serial
|
3 V ~ 3.6 V
|
0?C ~ 70?C
|
8-VDFN Exposed Pad
|
MR20H40CDFR |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (512K x 8)
|
50MHz
|
SPI Serial
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
8-VDFN Exposed Pad
|
MR25H40MDFR |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (512K x 8)
|
40MHz
|
SPI Serial
|
2.7 V ~ 3.6 V
|
-40?C ~ 125?C
|
8-VDFN Exposed Pad
|
MR25H40MDF |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
4M (512K x 8)
|
40MHz
|
SPI Serial
|
2.7 V ~ 3.6 V
|
-40?C ~ 125?C
|
8-VDFN Exposed Pad
|