MR0A08BCSO35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
1M (128K x 8)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
32-SOIC (0.295", 7.50mm Width)
|
MR25H10CDF |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
1M (128K x 8)
|
40MHz
|
SPI Serial
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
8-VDFN Exposed Pad
|
MR25H10CDC |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
1M (128K x 8)
|
40MHz
|
SPI Serial
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
8-VDFN Exposed Pad
|
MR25H10CDCR |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
1M (128K x 8)
|
40MHz
|
SPI Serial
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
8-TDFN Exposed Pad
|
MR25H10CDFR |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
1M (128K x 8)
|
40MHz
|
SPI Serial
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
8-VDFN Exposed Pad
|
MR25H10MDCR |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
1M (128K x 8)
|
40MHz
|
SPI Serial
|
2.7 V ~ 3.6 V
|
-40?C ~ 125?C
|
8-TDFN Exposed Pad
|
MR25H10MDFR |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
1M (128K x 8)
|
40MHz
|
SPI Serial
|
2.7 V ~ 3.6 V
|
-40?C ~ 125?C
|
8-VDFN Exposed Pad
|
MR0D08BMA45R |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
1M (128K x 8)
|
45ns
|
Parallel
|
3 V ~ 3.6 V
|
0?C ~ 70?C
|
48-LFBGA
|
MR0A08BMA35R |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
1M (128K x 8)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
0?C ~ 70?C
|
48-LFBGA
|
MR0A08BSO35R |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
1M (128K x 8)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
0?C ~ 70?C
|
32-SOIC (0.295", 7.50mm Width)
|