MR4A16BYS35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
16M (1M x 16)
|
35ns
|
Parallel
|
3 V ~ 36 V
|
0?C ~ 70?C
|
54-TSOP (0.400", 10.16mm Width)
|
MR4A16BCYS35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
16M (1M x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
54-TSOP (0.400", 10.16mm Width)
|
MR4A16BCMA35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
16M (1M x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-LFBGA
|
MR4A16BMA35R |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
16M (1M x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
0?C ~ 70?C
|
48-LFBGA
|
MR4A16BYS35R |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
16M (1M x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
0?C ~ 70?C
|
54-TSOP (0.400", 10.16mm Width)
|
MR4A16BCMA35R |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
16M (1M x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-LFBGA
|
MR4A16BCYS35R |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
16M (1M x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
54-TSOP (0.400", 10.16mm Width)
|
MR4A16BMYS35R |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
16M (1M x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 125?C
|
54-TSOP (0.400", 10.16mm Width)
|
MR4A16BMYS35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
16M (1M x 16)
|
35ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 125?C
|
54-TSOP (0.400", 10.16mm Width)
|
MR4A16BMA35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
16M (1M x 16)
|
35ns
|
Parallel
|
3 V ~ 36 V
|
0?C ~ 70?C
|
48-LFBGA
|