MB3793-30APNF-G-JN-ER6E1 |
FUJITSU SEMICONDUCTOR AMERICA INC |
|
1
|
CMOS Inverted
|
Active Low
|
30 ms Minimum
|
3V
|
-40?C ~ 85?C
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
MB3793-27APFV-G-JN-6E1 |
FUJITSU SEMICONDUCTOR AMERICA INC |
|
1
|
CMOS Inverted
|
Active Low
|
30 ms Minimum
|
2.7V
|
-40?C ~ 85?C
|
Surface Mount
|
8-LSOP (0.165", 4.20mm Width)
|
MB3793-30APNF-G-JN-6E1 |
FUJITSU SEMICONDUCTOR AMERICA INC |
|
1
|
CMOS Inverted
|
Active Low
|
30 ms Minimum
|
3V
|
-40?C ~ 85?C
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
MB3793-27APNF-G-JN-ER6E1 |
FUJITSU SEMICONDUCTOR AMERICA INC |
|
1
|
CMOS Inverted
|
Active Low
|
30 ms Minimum
|
2.7V
|
-40?C ~ 85?C
|
Surface Mount
|
8-SOIC (0.154", 3.90mm Width)
|
TPS386596L33DGKT |
TEXAS INSTRUMENTS INC |
|
4
|
Open Drain or Open Collector
|
Active Low
|
30 ms Minimum
|
2.9V, Adj, Adj, Adj
|
-40?C ~ 125?C
|
Surface Mount
|
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
|
TPS386596L33DGKR |
TEXAS INSTRUMENTS INC |
|
4
|
Open Drain or Open Collector
|
Active Low
|
30 ms Minimum
|
2.9V, Adj, Adj, Adj
|
-40?C ~ 125?C
|
Surface Mount
|
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
|