IS61WV51232BLL-10BLI |
INTEGRATED SILICON SOLUTION INC |
|
RAM
|
SRAM - Asynchronous
|
16M (512K x 32)
|
10ns
|
Parallel
|
1.65 V ~ 3.6 V
|
-40?C ~ 85?C
|
90-TFBGA
|
IS43LR32400F-6BLI |
INTEGRATED SILICON SOLUTION INC |
|
RAM
|
DDR SDRAM
|
128M (4M x 32)
|
166MHz
|
Parallel
|
1.7 V ~ 1.9 V
|
-40?C ~ 85?C
|
90-TFBGA
|
IS61WV25632BLL-10BLI-TR |
INTEGRATED SILICON SOLUTION INC |
|
RAM
|
SRAM - Asynchronous
|
8M (256K x 32)
|
10ns
|
Parallel
|
2.4 V ~ 3.6 V
|
-40?C ~ 85?C
|
90-TFBGA
|
IS61WV51232BLL-10BLI-TR |
INTEGRATED SILICON SOLUTION INC |
|
RAM
|
SRAM - Asynchronous
|
16M (512K x 32)
|
10ns
|
Parallel
|
1.65 V ~ 3.6 V
|
-40?C ~ 85?C
|
90-TFBGA
|
IS43LR32160B-6BLI |
INTEGRATED SILICON SOLUTION INC |
|
RAM
|
DDR SDRAM
|
512M (16M x 32)
|
166MHz
|
Parallel
|
1.7 V ~ 1.9 V
|
-40?C ~ 85?C
|
90-TFBGA
|
W949D2CBJX5E |
WINBOND ELECTRONICS CORP |
|
RAM
|
Mobile LPDDR SDRAM
|
512M (16M x 32)
|
200MHz
|
Parallel
|
1.7 V ~ 1.95 V
|
-25?C ~ 85?C
|
90-TFBGA
|
W947D2HBJX5E |
WINBOND ELECTRONICS CORP |
|
RAM
|
Mobile LPDDR SDRAM
|
128M (4M x 32)
|
200MHz
|
Parallel
|
1.7 V ~ 1.95 V
|
-25?C ~ 85?C
|
90-TFBGA
|
W947D2HBJX6E |
WINBOND ELECTRONICS CORP |
|
RAM
|
Mobile LPDDR SDRAM
|
128M (4M x 32)
|
166MHz
|
Parallel
|
1.7 V ~ 1.95 V
|
-25?C ~ 85?C
|
90-TFBGA
|
W987D2HBJX6E |
WINBOND ELECTRONICS CORP |
|
RAM
|
Mobile LPSDR SDRAM
|
128M (4M x 32)
|
166MHz
|
Parallel
|
1.7 V ~ 1.95 V
|
-25?C ~ 85?C
|
90-TFBGA
|
W987D2HBJX7E |
WINBOND ELECTRONICS CORP |
|
RAM
|
Mobile LPSDR SDRAM
|
128M (4M x 32)
|
133MHz
|
Parallel
|
1.7 V ~ 1.95 V
|
-25?C ~ 85?C
|
90-TFBGA
|