MR25H256CDC |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
256K (32K x 8)
|
40MHz
|
SPI Serial
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
8-TDFN Exposed Pad
|
MR25H256MDCR |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
256K (32K x 8)
|
40MHz
|
SPI Serial
|
2.7 V ~ 3.6 V
|
-40?C ~ 125?C
|
8-TDFN Exposed Pad
|
MR25H10CDCR |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
1M (128K x 8)
|
40MHz
|
SPI Serial
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
8-TDFN Exposed Pad
|
MR25H10MDCR |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
1M (128K x 8)
|
40MHz
|
SPI Serial
|
2.7 V ~ 3.6 V
|
-40?C ~ 125?C
|
8-TDFN Exposed Pad
|
MR25H256CDCR |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
256K (32K x 8)
|
40MHz
|
SPI Serial
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
8-TDFN Exposed Pad
|
MR25H256MDC |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
256K (32K x 8)
|
40MHz
|
SPI Serial
|
2.7 V ~ 3.6 V
|
-40?C ~ 125?C
|
8-TDFN Exposed Pad
|
MR25H10MDC |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
1M (128K x 8)
|
40MHz
|
SPI Serial
|
2.7 V ~ 3.6 V
|
-40?C ~ 125?C
|
8-TDFN Exposed Pad
|