| Part Numbers | Manufacturer Name | Datasheet | Format - Memory | Memory Type | Memory Size | Speed | Interface | Voltage - Supply | Operating Temperature | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|
| FM21LD16-60-BGTR | CYPRESS SEMICONDUCTOR CORP | RAM | FRAM (Ferroelectric RAM) | 2M (128K x 16) | 60ns | Parallel | 2.7 V ~ 3.6 V | -40?C ~ 85?C | 48-TFBGA | |
| FM21LD16-60-BG | CYPRESS SEMICONDUCTOR CORP | RAM | FRAM (Ferroelectric RAM) | 2M (128K x 16) | 60ns | Parallel | 2.7 V ~ 3.6 V | -40?C ~ 85?C | 48-TFBGA | |
| M29W064FB6AZA6F TR | MICRON TECHNOLOGY INC | FLASH | FLASH - NOR | 64M (8M x 8, 4M x 16) | 60ns | Parallel | 2.7 V ~ 3.6 V | -40?C ~ 85?C | 48-TFBGA | |
| M29W064FT6AZA6F TR | MICRON TECHNOLOGY INC | FLASH | FLASH - NOR | 64M (8M x 8, 4M x 16) | 60ns | Parallel | 2.7 V ~ 3.6 V | -40?C ~ 85?C | 48-TFBGA | |
| M29W640GB6AZA6F TR | MICRON TECHNOLOGY INC | FLASH | FLASH - NOR | 64M (8M x 8, 4M x 16) | 60ns | Parallel | 2.7 V ~ 3.6 V | -40?C ~ 85?C | 48-TFBGA | |
| M29W064FB6AZA6E | MICRON TECHNOLOGY INC | FLASH | FLASH - NOR | 64M (8M x 8, 4M x 16) | 60ns | Parallel | 2.7 V ~ 3.6 V | -40?C ~ 85?C | 48-TFBGA | |
| M29W064FT6AZA6E | MICRON TECHNOLOGY INC | FLASH | FLASH - NOR | 64M (8M x 8, 4M x 16) | 60ns | Parallel | 2.7 V ~ 3.6 V | -40?C ~ 85?C | 48-TFBGA | |
| M29W640GB6AZA6E | MICRON TECHNOLOGY INC | FLASH | FLASH - NOR | 64M (8M x 8, 4M x 16) | 60ns | Parallel | 2.7 V ~ 3.6 V | -40?C ~ 85?C | 48-TFBGA | |
| M29DW641F60ZE6E | MICRON TECHNOLOGY INC | FLASH | FLASH - NOR | 64M (4M x 16) | 60ns | Parallel | 2.7 V ~ 3.6 V | -40?C ~ 85?C | 48-TFBGA | |
| M29W640GB60ZA6E | MICRON TECHNOLOGY INC | FLASH | FLASH - NOR | 64M (8M x 8, 4M x 16) | 60ns | Parallel | 2.7 V ~ 3.6 V | -40?C ~ 85?C | 48-TFBGA |
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