CY14U256LA-BA35XI |
CYPRESS SEMICONDUCTOR CORP |
|
RAM
|
NVSRAM (Non-Volatile SRAM)
|
256K (32K x 8)
|
35ns
|
Parallel
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-TFBGA
|
CY14U256LA-BA35XIT |
CYPRESS SEMICONDUCTOR CORP |
|
RAM
|
NVSRAM (Non-Volatile SRAM)
|
256K (32K x 8)
|
35ns
|
Parallel
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-TFBGA
|
CY14V256LA-BA35XIT |
CYPRESS SEMICONDUCTOR CORP |
|
RAM
|
NVSRAM (Non-Volatile SRAM)
|
256K (32K x 8)
|
35ns
|
Parallel
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-TFBGA
|
CY14V256LA-BA35XI |
CYPRESS SEMICONDUCTOR CORP |
|
RAM
|
NVSRAM (Non-Volatile SRAM)
|
256K (32K x 8)
|
35ns
|
Parallel
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-TFBGA
|
IS62WV102416ALL-35MLI-TR |
INTEGRATED SILICON SOLUTION INC |
|
RAM
|
SRAM - Asynchronous
|
16M (1M x 16)
|
35ns
|
Parallel
|
1.65 V ~ 2.2 V
|
-40?C ~ 85?C
|
48-TFBGA
|
IS62WV102416ALL-35MLI |
INTEGRATED SILICON SOLUTION INC |
|
RAM
|
SRAM - Asynchronous
|
16M (1M x 16)
|
35ns
|
Parallel
|
1.65 V ~ 2.2 V
|
-40?C ~ 85?C
|
48-TFBGA
|