MT29C8G96MAYBADJV-5 WT TR |
MICRON TECHNOLOGY INC |
|
FLASH
|
FLASH - NAND, Mobile LPDRAM
|
8G (1G x 8)(NAND), 4G (128M x 32)(LPDRAM)
|
200MHz
|
Parallel
|
1.7 V ~ 1.95 V
|
-25?C ~ 85?C
|
168-VFBGA
|
MT29C8G96MAZBADJV-5 IT TR |
MICRON TECHNOLOGY INC |
|
FLASH
|
FLASH - NAND, Mobile LPDRAM
|
8G (512M x 16)(NAND), 4G (128M x 32)(LPDRAM)
|
200MHz
|
Parallel
|
1.7 V ~ 1.95 V
|
-40?C ~ 85?C
|
168-VFBGA
|
MT29C8G96MAZBADJV-5 WT TR |
MICRON TECHNOLOGY INC |
|
FLASH
|
FLASH - NAND, Mobile LPDRAM
|
8G (512M x 16)(NAND), 4G (128M x 32)(LPDRAM)
|
200MHz
|
Parallel
|
1.7 V ~ 1.95 V
|
-25?C ~ 85?C
|
168-VFBGA
|
MT29C8G96MAZBADKD-5 WT TR |
MICRON TECHNOLOGY INC |
|
FLASH
|
FLASH - NAND, Mobile LPDRAM
|
8G (512M x 16)(NAND), 4G (128M x 32)(LPDRAM)
|
200MHz
|
Parallel
|
1.7 V ~ 1.95 V
|
-25?C ~ 85?C
|
168-VFBGA
|
MT29C8G96MAYBADJV-5 WT |
MICRON TECHNOLOGY INC |
|
FLASH
|
FLASH - NAND, Mobile LPDRAM
|
8G (1G x 8)(NAND), 4G (128M x 32)(LPDRAM)
|
200MHz
|
Parallel
|
1.7 V ~ 1.95 V
|
-25?C ~ 85?C
|
168-VFBGA
|
MT29C8G96MAZBADJV-5 IT |
MICRON TECHNOLOGY INC |
|
FLASH
|
FLASH - NAND, Mobile LPDRAM
|
8G (512M x 16)(NAND), 4G (128M x 32)(LPDRAM)
|
200MHz
|
Parallel
|
1.7 V ~ 1.95 V
|
-40?C ~ 85?C
|
168-VFBGA
|
MT29C8G96MAZBADJV-5 WT |
MICRON TECHNOLOGY INC |
|
FLASH
|
FLASH - NAND, Mobile LPDRAM
|
8G (512M x 16)(NAND), 4G (128M x 32)(LPDRAM)
|
200MHz
|
Parallel
|
1.7 V ~ 1.95 V
|
-25?C ~ 85?C
|
168-VFBGA
|
MT29C8G96MAZBADKD-5 WT |
MICRON TECHNOLOGY INC |
|
FLASH
|
FLASH - NAND, Mobile LPDRAM
|
8G (512M x 16)(NAND), 4G (128M x 32)(LPDRAM)
|
200MHz
|
Parallel
|
1.7 V ~ 1.95 V
|
-25?C ~ 85?C
|
168-VFBGA
|
MT29C8G96MAZBADKD-5 IT TR |
MICRON TECHNOLOGY INC |
|
FLASH
|
FLASH - NAND, Mobile LPDRAM
|
8G (512M x 16)(NAND), 4G (128M x 32)(LPDRAM)
|
200MHz
|
Parallel
|
1.7 V ~ 1.95 V
|
-40?C ~ 85?C
|
168-VFBGA
|
MT29C8G96MAZBADKD-5 IT |
MICRON TECHNOLOGY INC |
|
FLASH
|
FLASH - NAND, Mobile LPDRAM
|
8G (512M x 16)(NAND), 4G (128M x 32)(LPDRAM)
|
200MHz
|
Parallel
|
1.7 V ~ 1.95 V
|
-40?C ~ 85?C
|
168-VFBGA
|