MR4A16BYS35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
16M (1M x 16)
|
35ns
|
Parallel
|
3 V ~ 36 V
|
0?C ~ 70?C
|
54-TSOP (0.400", 10.16mm Width)
|
MR4A08BMA35R |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
16M (2M x 8)
|
35ns
|
Parallel
|
3 V ~ 36 V
|
0?C ~ 70?C
|
48-LFBGA
|
MR4A08BMA35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
16M (2M x 8)
|
35ns
|
Parallel
|
3 V ~ 36 V
|
0?C ~ 70?C
|
48-LFBGA
|
MR4A16BMA35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
16M (1M x 16)
|
35ns
|
Parallel
|
3 V ~ 36 V
|
0?C ~ 70?C
|
48-LFBGA
|
MR4A08BYS35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
16M (2M x 8)
|
35ns
|
Parallel
|
3 V ~ 36 V
|
0?C ~ 70?C
|
44-TSOP (0.400", 10.16mm Width)
|
MR4A08BCYS35 |
EVERSPIN TECHNOLOGIES INC |
|
RAM
|
MRAM (Magnetoresistive RAM)
|
16M (2M x 8)
|
35ns
|
Parallel
|
3 V ~ 36 V
|
-40?C ~ 85?C
|
44-TSOP (0.400", 10.16mm Width)
|