| Part Numbers | Manufacturer Name | Datasheet | Format - Memory | Memory Type | Memory Size | Speed | Interface | Voltage - Supply | Operating Temperature | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|
| FM28V100-TGTR | CYPRESS SEMICONDUCTOR CORP | RAM | FRAM (Ferroelectric RAM) | 1M (128K x 8) | 60ns | Parallel | 2 V ~ 3.6 V | -40?C ~ 85?C | 32-TFSOP (0.465", 11.80mm Width) | |
| FM28V100-TG | CYPRESS SEMICONDUCTOR CORP | RAM | FRAM (Ferroelectric RAM) | 1M (128K x 8) | 60ns | Parallel | 2 V ~ 3.6 V | -40?C ~ 85?C | 32-TFSOP (0.465", 11.80mm Width) | |
| FM21L16-60-TGTR | CYPRESS SEMICONDUCTOR CORP | RAM | FRAM (Ferroelectric RAM) | 2M (128K x 16) | 60ns | Parallel | 2.7 V ~ 3.6 V | -40?C ~ 85?C | 44-TSOP (0.400", 10.16mm Width) | |
| FM21LD16-60-BGTR | CYPRESS SEMICONDUCTOR CORP | RAM | FRAM (Ferroelectric RAM) | 2M (128K x 16) | 60ns | Parallel | 2.7 V ~ 3.6 V | -40?C ~ 85?C | 48-TFBGA | |
| FM21L16-60-TG | CYPRESS SEMICONDUCTOR CORP | RAM | FRAM (Ferroelectric RAM) | 2M (128K x 16) | 60ns | Parallel | 2.7 V ~ 3.6 V | -40?C ~ 85?C | 44-TSOP (0.400", 10.16mm Width) | |
| FM21LD16-60-BG | CYPRESS SEMICONDUCTOR CORP | RAM | FRAM (Ferroelectric RAM) | 2M (128K x 16) | 60ns | Parallel | 2.7 V ~ 3.6 V | -40?C ~ 85?C | 48-TFBGA | |
| IS41LV16100B-60KL | INTEGRATED SILICON SOLUTION INC | RAM | DRAM - EDO | 16M (1M x 16) | 60ns | Parallel | 3 V ~ 3.6 V | 0?C ~ 70?C | 42-SOJ | |
| IS41LV16100B-60KL-TR | INTEGRATED SILICON SOLUTION INC | RAM | DRAM - EDO | 16M (1M x 16) | 60ns | Parallel | 3 V ~ 3.6 V | 0?C ~ 70?C | 42-SOJ | |
| IS41LV16100B-60KLI | INTEGRATED SILICON SOLUTION INC | RAM | DRAM - EDO | 16M (1M x 16) | 60ns | Parallel | 3 V ~ 3.6 V | -40?C ~ 85?C | 42-SOJ | |
| IS41LV16100B-60KLI-TR | INTEGRATED SILICON SOLUTION INC | RAM | DRAM - EDO | 16M (1M x 16) | 60ns | Parallel | 3 V ~ 3.6 V | -40?C ~ 85?C | 42-SOJ |
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