FM28V100-TGTR |
CYPRESS SEMICONDUCTOR CORP |
|
RAM
|
FRAM (Ferroelectric RAM)
|
1M (128K x 8)
|
60ns
|
Parallel
|
2 V ~ 3.6 V
|
-40?C ~ 85?C
|
32-TFSOP (0.465", 11.80mm Width)
|
FM28V100-TG |
CYPRESS SEMICONDUCTOR CORP |
|
RAM
|
FRAM (Ferroelectric RAM)
|
1M (128K x 8)
|
60ns
|
Parallel
|
2 V ~ 3.6 V
|
-40?C ~ 85?C
|
32-TFSOP (0.465", 11.80mm Width)
|
FM21L16-60-TGTR |
CYPRESS SEMICONDUCTOR CORP |
|
RAM
|
FRAM (Ferroelectric RAM)
|
2M (128K x 16)
|
60ns
|
Parallel
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
44-TSOP (0.400", 10.16mm Width)
|
FM21LD16-60-BGTR |
CYPRESS SEMICONDUCTOR CORP |
|
RAM
|
FRAM (Ferroelectric RAM)
|
2M (128K x 16)
|
60ns
|
Parallel
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-TFBGA
|
FM21L16-60-TG |
CYPRESS SEMICONDUCTOR CORP |
|
RAM
|
FRAM (Ferroelectric RAM)
|
2M (128K x 16)
|
60ns
|
Parallel
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
44-TSOP (0.400", 10.16mm Width)
|
FM21LD16-60-BG |
CYPRESS SEMICONDUCTOR CORP |
|
RAM
|
FRAM (Ferroelectric RAM)
|
2M (128K x 16)
|
60ns
|
Parallel
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-TFBGA
|
IS41LV16100B-60KL |
INTEGRATED SILICON SOLUTION INC |
|
RAM
|
DRAM - EDO
|
16M (1M x 16)
|
60ns
|
Parallel
|
3 V ~ 3.6 V
|
0?C ~ 70?C
|
42-SOJ
|
IS41LV16100B-60KL-TR |
INTEGRATED SILICON SOLUTION INC |
|
RAM
|
DRAM - EDO
|
16M (1M x 16)
|
60ns
|
Parallel
|
3 V ~ 3.6 V
|
0?C ~ 70?C
|
42-SOJ
|
IS41LV16100B-60KLI |
INTEGRATED SILICON SOLUTION INC |
|
RAM
|
DRAM - EDO
|
16M (1M x 16)
|
60ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
42-SOJ
|
IS41LV16100B-60KLI-TR |
INTEGRATED SILICON SOLUTION INC |
|
RAM
|
DRAM - EDO
|
16M (1M x 16)
|
60ns
|
Parallel
|
3 V ~ 3.6 V
|
-40?C ~ 85?C
|
42-SOJ
|