CY14B108L-BA45XI |
CYPRESS SEMICONDUCTOR CORP |
|
RAM
|
NVSRAM (Non-Volatile SRAM)
|
8M (1M x 8)
|
45ns
|
Parallel
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-TFBGA
|
CY14B108L-BA25XI |
CYPRESS SEMICONDUCTOR CORP |
|
RAM
|
NVSRAM (Non-Volatile SRAM)
|
8M (1M x 8)
|
25ns
|
Parallel
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-TFBGA
|
CY14B108L-BA45XIT |
CYPRESS SEMICONDUCTOR CORP |
|
RAM
|
NVSRAM (Non-Volatile SRAM)
|
8M (1M x 8)
|
45ns
|
Parallel
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-TFBGA
|
CY14B108L-BA25XIT |
CYPRESS SEMICONDUCTOR CORP |
|
RAM
|
NVSRAM (Non-Volatile SRAM)
|
8M (1M x 8)
|
25ns
|
Parallel
|
2.7 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-TFBGA
|
IS61WV10248BLL-10MLI-TR |
INTEGRATED SILICON SOLUTION INC |
|
RAM
|
SRAM - Asynchronous
|
8M (1M x 8)
|
10ns
|
Parallel
|
2.4 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-TFBGA
|
IS61WV10248BLL-10MLI |
INTEGRATED SILICON SOLUTION INC |
|
RAM
|
SRAM - Asynchronous
|
8M (1M x 8)
|
10ns
|
Parallel
|
2.4 V ~ 3.6 V
|
-40?C ~ 85?C
|
48-TFBGA
|